A Time Domain Method of Measuring Transistor Parameters for Complete Small Signal Characterization Up to 1 gc

摘要

This report describes a method of measuring transistor small signal parameters over a wide frequency range using time domain techniques. A sampling oscilloscope and tunnel diode pulse generator are used to obtain five times response curves from the transistor which is inserted into a 50 ohm coaxial air-dielectric transmission line. A digital computer is used to perform frequency spectrum analysis on the curves, and to calculate the open and short circuit parameters for complete characterization of the transistor. The hybrid parameters of an RC network and three transistors were measured and compared with measurements made in the frequency domain. Good agreement was obtained between methods up to 500 Mc with reduced accuracy to 1 Gc. (Author)