Novel Variable Wide Bandgap Material for High Power, High Frequency Devices.

摘要

Every deposition technique has its advantages and disadvantages. Hollow cathode sputtering is no different, but, while one must acknowledge the downsides to this technique, it offers several advantages, providing the motivation behind selecting this method for depositing epitaxial thin films of SiC in this study. The system used here had previously been used to deposit crystalline Ge films with up to 9% C in lattice sites. Like the GeC films, sputtering Ge atoms simultaneously with SiC could introduce Ge into the lattice structure creating a heterojunction partner to SiC from which graded bandgap transistors emerge. Although it was not possible to attain temperatures high enough to form 4-H SiC on 4-H SiC substrates several results were very promising for the continuation of these experiments. The success generated in this study growing 3C-SiC films on 4H-SiC substrates generated a belief that high-quality 3C-SiC films on inexpensive Si substrates could also be produced. The results of growing 3C-SiC on Si substrates are the main part of this report.