Research Directed Toward Preparation of Compound Semi-Conductors by Controlled Diffusion Mechanism in Gels.

摘要

Single crystal growth in gels near ambient temperature offers many advantages,especially for substances which are slightly soluble in water and which are not easily grown from the melt or vapor. Selected group 2-6compounds have been studied in this respect because of their potential for semiconductor applications. The role of major variables affecting nucleation and growth (including diffusion rates of reactants) was clarified. A graphical solution of the equation for diffusion rates has been developed,permitting the gel growth optimization of single crystals,particularly lead sulfide. Experimental data obtained for single crystals of lead sulfide and selected other group 2-6compounds are summarized emphasizing electronic properties. A novel system for batch and continuous gel growth of lead sulfide crystals up to 2mm on edge near ambient temperature is described. Additional studies are suggested to broaden the applicability of crystal growth in gels. (Author)