Localized Vibrational Modes of a Persistent Defect in Ion-Implanted Silicon Carbide.

摘要

The low-temperature luminescence spectrum of an intrinsic defect in ion-implanted cubic SiC reveals a number of high-energy localized modes. One has an energy of 164.7 meV, equivalent to the highest lattice frequency in diamond, and far above the 120.5 meV lattice limit of SiC. A carbon di-interstitial is a plausible model for the defect, which appears after a 1300C anneal, and persists after a 1700C anneal. (Author)