Preparation and Properties of PbS-Si Heterojunctions for Infrared Charge Coupled Imaging.

摘要

Narrow bandgap-silicon heterojunctions are examined theoretically and experimentally to assess the feasibility of extending charge coupled devices (CCD) imaging to the infrared. Ultra-high vacuum deposition of PbS on silicon is made using both direct sublimation and hot-wall film growth techniques. Substrate preparation in vacuum is discussed and the dependence of film properties on growth parameters is presented. Measurements of I-V, C-V and photoresponse characteristics of the PbS-Si heterojunctions are presented. (Author)