Study of Bulk Trapping Effects in Radiation-Resistence MOS Devices.

摘要

The properties of MOS transistors are examined before and after exposure to large neutron fluences. The effect is concentrated on three phenomena,judged to be the most serious limitations on ultimate device hardness: (1) Trapping of carriers in radiation induced deep levels (2) degradation of the mobility of carriers in the channel,and (3) punch-through from drain to source. Data are obtained on three classes of devices (1) hardened MOS transistors manufactured by Hughes (2) MOS transistors manufactured at Siliconiz,and (3) several special vertical pnp and npn structures. (Modified author abstract)