Investigation of Technical Problems in Gallium Arsenide.

摘要

A broad area of technolgical problems of GaAs is covered in this progress report. The goal is to make contributions that will improve the current technology of microwave devices. The devices considered here are the Schottky barrier FET (MESFET) and the IMPATT diode. The work reported here covers problems of growth and characterization of very thin high-conductivity epitaxial films and high-resistivity epitaxial films;some aspects of processing of MESFET devices;study of the RF performance of IMPATT diodes and its relationship with the material parameters;problems of growth and characterization of semi-insulating GaAs;use of proton bombardment to convert conductive layers into high-resistivity layers,and,finally,study of n-type doping of GaAs by ion implantation with particular emphasis on the annealing problems. (Modified author abstract)