Investigations of Technical Problems in Gallium Arsenide.

摘要

Various technological problems in the development of GaAs microwave devices are covered in this report. The work reported here includes: epitaxial growth of ultra-thin and high-resistivity films, study of the relationship between device performance and material parameters using IMPATT diodes, annealing study of n-n(+) interfaces to improve their electrical properties, growth of semi-insulating substrates and characterization techniques, and study of ion implantation as a tool for microwave device fabrication.