The Physics of Interface Interactions Related to Reliability of Future Electronic Devices.

摘要

Contents:The reliability of semiconductor-insulator interfaces-(Impact ionization model for dielectric instability breakdown;Phosphorus precipitation on Si/SiO2interfaces);Band structure and switching in insulators--(Optical properties of allotropic forms of SiO2;Structural transformations as observed by TEM during electrical switching in amorphous Ge-Te);Instabilities associated with metal-glass Interactions--(Analysis of thin film structures with nuclear backscattering and X-ray diffraction;Reactions of thin metal films with Si or SiO2substrates).