Electronic Raman Scattering and the Metal-Insulator Transition in Doped Silicon.

摘要

This paper applies the technique of electronic excitations in semiconductors to silicon doped with phosphorus donors. Emphasis is placed on the changes in the donor Raman spectra as the donor concentration is varied to produce the metal-insulator (M-I) transition. Many of the traditional experimental methods for studying this transition, such as transport, electron-spin-resonance, and nuclear-magnetic-resonance measurements, deal with properties of the low-lying electronic excitations near the Fermi level. The Raman effect studies higher excitations and the concentration dependence of both initial and final states.