首页> 外国专利> ABRUPT METAL-INSULATOR TRANSITION DEVICE, CIRCUIT FOR REMOVING HIGH-VOLTAGE NOISE USING THE ABRUPT METAL-INSULATOR TRANSITION DEVICE, AND ELECTRICAL AND/OR ELECTRONIC SYSTEM COMPRISING THE CIRCUIT

ABRUPT METAL-INSULATOR TRANSITION DEVICE, CIRCUIT FOR REMOVING HIGH-VOLTAGE NOISE USING THE ABRUPT METAL-INSULATOR TRANSITION DEVICE, AND ELECTRICAL AND/OR ELECTRONIC SYSTEM COMPRISING THE CIRCUIT

机译:绝缘金属绝缘体过渡装置,使用绝缘金属绝缘体过渡装置消除高压噪声的电路,以及构成该电路的电气和/或电子系统

摘要

Provided are an abrupt metal-insulator transition (MIT) device for bypassing super-high voltage noise to protect an electric and/or electronic system, such as, a high-voltage switch, from a super-high voltage, a high-voltage noise removing circuit for bypassing the super-high voltage noise using the abrupt MIT device, and an electric and/or electronic system including the high-voltage noise removing circuit. The abrupt MIT device includes a substrate, a first abrupt MIT structure, and a second abrupt MIT structure. The first and second abrupt MIT structures are formed on an upper surface and a lower surface, respectively, of the substrate. The high-voltage noise removing circuit includes an abrupt MIT device chain connected in parallel to the electric and/or electronic system to be protected. The abrupt MIT device chain includes at least two abrupt MIT devices serially connected to each other.
机译:提供了一种突变的金属-绝缘体过渡(MIT)设备,用于绕过超高压噪声,以保护电气和/或电子系统,例如高压开关,免受超高压,高压噪声的影响。去除电路,其使用突变的MIT装置绕过超高压噪声,以及包括该高压噪声去除电路的电气和/或电子系统。突变MIT装置包括衬底,第一突变MIT结构和第二突变MIT结构。第一和第二突变MIT结构分别形成在基板的上表面和下表面上。高压噪声消除电路包括与要保护的电气和/或电子系统并联的突变MIT设备链。突然的MIT设备链包括至少两个彼此串行连接的突然的MIT设备。

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