首页> 外国专利> Abrupt metal-insulator transition element, high-voltage noise removal circuit using the abrupt metal-insulator transition element, and electric / electronic system including the circuit

Abrupt metal-insulator transition element, high-voltage noise removal circuit using the abrupt metal-insulator transition element, and electric / electronic system including the circuit

机译:突变金属绝缘体过渡元件,使用该突变金属绝缘体过渡元件的高压噪声消除电路以及包括该电路的电气/电子系统

摘要

An abrupt MIT device, a high-voltage noise removing circuit using the same, and an electrical and electronic system with the circuit are provided to remove a high-voltage noise higher than a limit voltage of each of the abrupt MIT devices by using serially-connected abrupt MIT devices. An abrupt MIT(Metal-Insulator Transition) device includes a substrate(100) and first and second abrupt MIT structures(600,600a) respectively formed on an upper surface and a lower surface of the substrate. Each of the first and second abrupt MIT structures has a characteristic of an insulator below a predetermined limit voltage and has a characteristic of a metal above the limit voltage. Each of the first and second abrupt metal-insulator transition structures has an abrupt MIT thin film and at least two electrode thin films contacting the abrupt MIT thin film.
机译:提供了一种突变型MIT装置,使用该装置的高压噪声消除电路以及具有该电路的电气和电子系统,以通过串联使用来消除高于每个突变型MIT装置的极限电压的高压噪声。连接了突然的MIT设备。突变MIT(金属-绝缘体转变)装置包括衬底(100)以及分别形成在衬底的上表面和下表面上的第一和第二突变MIT结构(600,600a)。第一突变MIT结构和第二突变MIT结构中的每一个均具有低于预定极限电压的绝缘体的特性,并且具有高于极限电压的金属的特性。第一和第二突变金属-绝缘体过渡结构的每一个具有突变的MIT薄膜和至少两个与突变的MIT薄膜接触的电极薄膜。

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