New Memory Device Structures.

摘要

The Air Force has requirements for a radiation-hardened shift register analog memory device for applications such as data storage, data re-formatting, and signal delay. The device must have low power consumption and a wide dynamic range, but nonvolatility is not required because of the nature of the real-time system application. The objective of the program carried out under Contract No. F33615-74-C-1054 is to investigate new semiconductor analog memory structures having the potential for extreme radiation hardness. Device performance goals are (1) sample rate of 10 MHz, (2) dynamic range of 1000, (3) maximum power dissipation of 40 microwatts per bit, (4) total dose hardness to ionizing radiation of 1M rad (Si), and (5) recovery within 10 Milliseconds after exposure to a pulse of ionizing radiation. (Author)