Boron Nitride Semiconductor Films.

摘要

Boron nitride was grown by reactive plasma deposition using the ammonia-diborane reaction. The crystalline growth on substrates of Si, pyrolytic graphite, compression-annealed pyrolytic graphite, compression annealed pyrolytic BN and diamond was investigated by electron microscopy. The effect of gas ratio and substrate temperature on growth rate was also investigated. Electrical measurements were taken and an effort was made to determine the drift velocity of carriers in thin films of BN. (Author)