Purification,Controlled Doping and Crystal Growth of II-VI Compound Semiconductors.

摘要

The synthesis of various ultra high purity compounds of the II-VI group of semiconductor materials is described and tables of analytical data for each are included. The level of impurity concentration in synthesized ZnSe has been significantly lowered. The growth of crystals of II-VI compounds from the melt in the pressure furnace is reported. Included are data concerning doping of melt grown crystals with various amounts of selected impurities. The overall quality of the melt grown ZnSe has been improved.