Distributed Feedback Semiconductor Injection Laser with Efficient Feedback Coupling.

摘要

Attempts were made to produce a GaAs diode laser structure suitable for bombardment by 200 keV protons. The objective was to bombard the active region through a fine grating mesh in order to produce lasers whose gain varied periodically along the length of the junction. The requirements for the structure were that the local surface roughness be no more than the order of a wavelength of light, and that the active layer of the structure be within two micrometers of the surface. Difficulties were encountered in making morphologically acceptable layers. However, the resolution of those difficulties gave insight into the limitations of the sliding boat LPE technique. Poor device performance was ultimately attributed to the fundamental device structure rather than surface morphology. (Author)