Damage Profiles in Silicon and Their Impact on Device Reliability.

机译：硅中的损伤特征及其对器件可靠性的影响。

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N-type Si was implanted with 200 keV Cs(+) with doses ranging from 10 to the 13th power to 10 to the 15th power ions/sq cm. After nitrogen anneal MOS capacitors were formed by thermal oxidation and Al deposition. Transmission electron microscopy was used to study the residual ion damage.

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schwuttke, g. h.;
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年度 1977
页码 1-51
总页数 51
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Metal oxide semiconductors; Silicon; Cesium; Ion implantation; Dose rate; Nitrogen; Annealing; Capacitors; Oxidation; Aluminum; Deposition; Electron microscopy; Residual stress; Damage assessment; Crystal defects; Gallium arsenides; N type semiconductors; Semiconductor devices; Fabrication; Radiation effects;

机译：金属氧化物半导体;硅;铯;离子注入;剂量率;氮;退火;电容器;氧化;铝;沉积;电子显微镜;残余应力;损伤评估;晶体缺陷;砷化镓; N型半导体;半导体器件;制造;以及它们的混合物。辐射效应;

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8. Damage Profiles in Silicon and their Impact on Device Reliability. [R] . schwuttke, g. h. yang, k. h. 1978

机译：硅中的损伤特征及其对器件可靠性的影响。

Damage Profiles in Silicon and Their Impact on Device Reliability.

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