Damage Profiles in Silicon and their Impact on Device Reliability.

摘要

The principle of defect engineering is applied to GaAs substrates to produce epitaxial layers of low crystallographic defect density. Defect engineering is achieved through control of surface stresses in GaAs wafers during high temperature processing. Surface stress control is obtained through Impact Sound Stressing damage introduced on wafer backsides before epitaxial processing. Thus, epitaxial GaAs layers obtained through liquid phase epitaxy contain low dislocation numbers through confinements of threading dislocations to the epitaxial-substrate interface. A detailed analysis of ISS damage in GaAs before and after annealing is also given. (Author)