Interface Characteristics of Thermal SiO2 on SiC.

机译：siC上热siO2的界面特性。

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Kee, R. W.; Geib, K. M.; Wilmsen, C. W.; Ferry, D. K.;
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年度 1978
页码 1-6
总页数 6
原文格式 PDF
正文语种 eng
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关键词
Silicon dioxide; Silicon carbides; Interfaces; Silicon; Semiconductors; Layers; Width; Auger electron spectroscopy; Epitaxial growth; Substrates; Reprints;

机译：二氧化硅;碳化硅;界面;硅;半导体;层;宽度;俄歇电子能谱;外延生长;基板;重印;

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4. Experimental and computational studies on the refractive index and interface state for nano interface of SiO2/Si and Si3N4/SiO2/Si [C] . Li-mei Rong, Bo Liu, Zhi-jun Meng, IEEE International Nanoelectronics Conference . 2016

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6. A look underneath the SiO2/4H-SiC interface after N2O thermal treatments [O] . Patrick Fiorenza, Filippo Giannazzo, Lukas K Swanson, 2013

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7. The Role Played in the Improvement of the SiO2/SiC Interface by a Thin SiO2 Film Thermally Grown Prior to Oxide Film Deposition [O] . E. Pitthan, R. Palmieri, S. A. Correa, 2012

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8. Interface Characteristics of Thermal SiO2 on SiC. [R] . Kee, R. W., Geib, K. M., Wilmsen, C. W., 1978

机译：siC上热siO2的界面特性。

Interface Characteristics of Thermal SiO2 on SiC.

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