Electrical Characterization of GaAs Anodic Oxides Using Isothermal Dielectric Relaxation Current.

摘要

The theory and practical limitations of the IDRC technique of Mar and Simmons are discussed. An improved version of the original experiment that incorporates digital processing of the data is described. Results were obtained for Si and used to establish confidence in the new procedure. Anodic oxides of GaAs were then studied, and the results indicate that there are large densities of both fixed and mobile trap states at and near the interface. The mobile trap states behave as though negatively charged. (Author)