The isothermal dielectric relaxation currents in metal/holmium oxide/metal thin-film capacitors

摘要

In this paper the basic isothermal dielectric relaxation current (IDRC) characteristics of M/Ho/sub 2/O/sub 3//M thin film structures measured in the time domain are presented. These characteristics were examined at various applied voltages. The influence of temperature and the insulator thickness was also studied. The charge released during the relaxation process was estimated. Experimental data are discussed taking into account the volume of the insulating film and Schottky barriers formed at the M/I boundaries.