Liquid Encapsulated Compounding and Czochralski Growth of Semi-Insulating Gallium Arsenide for Microwave/Millimeter-Wave Applications.

摘要

A wide variety of semiconductor devices utilizing gallium arsenide are currently under development by the military for use in secure communication, improved surveillance, and high speed digital logic systems. The GaAs field effect transistor, a critical component in these systems, is experiencing a rapidly expanding use in oscillator, mixer, logic element, power amplification, and low-noise/high-gain applications. However, the full potential of this device has not been realized, partly because of poor and unpredictable quality semi-insulating GaAs substrates. More specifically, native defects, electrically active impurities, and diffusing charge traps are problems associated with commercial substrates. A silicon- and carbon-free modification of the liquid encapsulated Czochralski technique is described which yields high purity semi-insulating GaAs (approximately 10 to the 8th ohm-cm) without the intentional addition of charge compensators. The technique employs liquid encapsulated compounding of GaAs at nitrogen pressures to 100 atm, ultrapure elements, and pyrolytic boron nitride crucibles. A high pressure (135 atm) Varian HPCZ Czochralski crystal puller is employed for both compounding and crystal growth. (Author)