Nature of the acceptor responsible for p-type conduction in liquid encapsulated Czochralski-grown undoped gallium antimonide

摘要

The acceptors in undoped liquid encapsulated Czochralski (LEC)-grown GaSb were investigated using temperature dependent Hall (TDH) and positron lifetime spectroscopy measurements. TDH measurements were performed on nonirradiated and electron irradiated undoped samples. The 34 meV acceptor was found to be the important one responsible for the p-type conduction in nonirradiated and the e--irradiated undoped materials annealed at temperatures up to 500°C. This acceptor was not related to any VGa-related defect detected and was most likely the GaSb antisite.