Two-Dimensional Avalanche Breakdown in Pt-Si Schottky Barrier Diodes

摘要

The development of a two-dimensional computer model was undertaken for calculating avalanche breakdown in a Pt-Si Schottky barrier diode. A principal objective of this program was to develop such a computer program, and make the source-code and operational data available to other workers in the field. Further, as a means to verify the applicability of this program junction, breakdown computations were to be undertaken throughout a wide range of physical parameters and ambient temperatures.