Dislocation Influence on the Electrical and Optical Properties of Semiconductors

摘要

Investigation of dislocation influence on electrical and optical properties of both semiconductor materials and devices are currently in vogue. If one knew the dislocation influence on electron state spectrum in semiconductors then most of the changes in properties of deformed semiconductors could be explained and even some predictions could be made. However, the concurrent presence of point defects (with their energy levels) and Cottrell atmospheres complicates the problem and leads to ambigous information on the energy levels resulting from the presence of dislocations. Part of the point defects could be thermally annealed in order to separate out the side effects. Therefore one of the main objects of the investigation was to separate outside effects, due to point defects, Cottrell impurity atmospheres, and the diffusion of gold during contact preparation, from the dislocation effects.