Investigation of Advanced Technology and High Field Electronic Properties of InP for Microwave Devices.

摘要

Progress in the understanding of preparation and properties of InP material has been made in the following main areas. First in the area of liquid phase epitaxial growth a breakthrough has been made in the understanding of parameters required for the preparation of high purity material. By secondary ion mass spectrometry the single most important residual donor impurity in layers was found to be silicon. Seocnd, there is a dynamic production of volatile SiO which contaminates the melt from the walls of the growth tube. Calculations of the thermodynamics of these systems showed that the silicon content could be reduced by baking a lower and lower temperatures.