A Method to Overcome the Problem of Series Resistance in the Capacitance-Voltage Technique for Carrier Density Determination.

摘要

The net donor density of n type GaAs epitaxial layers is commonly determined from capacitance - voltage measurements made on a Schottky barrier deposited on the epitaxial layer. The back ohmic contact is usually alloyed to the substrate, if it is n type, or to the layer itself, if the substrate is semiinsulating. In the latter case, the resistance R in series with the Schottky diode capacitance C can be significant and can introduce an error in the determination of C. In this note, a practical solution to the problem is proposed.