GaAs Analog Integrated Circuits (GaAs RF-LSI). Phase I. Progress Report. Volume I. Technical

摘要

The overall objective of the GaAs RF-LSI Development Program is the development of a family of monolithic GaAs analog integrated circuits operating at frequencies through X-band, and the implementation of a monolithic X-band receiver which combines a number of these building block circuits. The aim of the first phase effort was to amass the analysis, design, and process technology tools with which to implement the building block circuits and later the receiver. The general objective of Phase I, Device, Process and Circuit Techniques Investigation, was to undertake the device and process technology development necessary to support the Phase II, MSI Building Block Development. Closely coupled with the actual process development were theoretical studies addressing optimization of devices and circuit techniques for monolithic implementation. The following is a brief task by task summary of the work accomplished. The sections which follow this introduction are expanded discussions of each of the tasks.