Burn-In of Uncased Semiconductors. A Feasibility Study

摘要

The feasibility of burning-in uncased semiconductors has been demonstrated. Twelve quad 2-input NAND gates (type 5400) have been burned-in for 168 hours at +125 C in accordance with MIL-STD-883, Method 1005-1, Test Condition A. Eleven of the devices were retrieved in a physical condition suitable for subsequent use in conventional assembly operations, the twelfth having a corner broken off. The design of the carrier assembly and the special tooling required for assembly are described. (Author)