Laser and Electron Beam Processing of Semiconductors: CW Beam Processing of Ion Implanted Silicon.

摘要

Research on the use of directed energy sources, particularly cw lasers and electron beams, for semiconductor processing operations has been carried out at Stanford under the prinicipal sponsorship of DARPA since January 1, 1978. Over the two years from January 1, 1978 to December 31, 1980, research effort has been concentrated on three principal topics: (1) Use of lasers and electron beams for annealing ion implanted silicon under solid phase conditions; (2) Use of lasers and arc sources for recrystallization of thin polysilicon films and a study of the device potential of this material; and (3) Use of cw lasers and electron beams for promoting metal silicide reactions. In the following report we collect papers on the annealing of ion implanted silicon published during the period of time indicated above. A brief summary of the papers has been prepared to provide an overview of the work. Two subsquent reports will collect and summarize papers published on polysilicon and silicide formation, respectively.