Nonlinear Interactions between Laser Radiation and Spin-Aligned Carriers in Semiconductors

摘要

The central theme of this work is the effect of radiation upon the vector orientation of characteristic properties of photo-excited carriers in semiconductors. The orientation is referred to the direction of propagation and the polarization state of the exciting light. Initially the emphasis was on the optical properties of spin-aligned electrons, particularly their behavior in stimulated emission. The scope was extended to include ordering of orbital angular moments, and electron wave vectors as well. The material of choice was GaAs, now rapidly emerging as most important for a variety of optical, electronic and optoelectronic applications. The work performed falls into three categories: (a) development of novel experimental techniques (b) development of new theoretical approaches and (c) development of improved material. In the short duration of this contract the work remains, incomplete; however, we have made progress of considerable consequence in the areas where we had anticipated difficulty, thus providing a longer term challenge. (Author)