Large-Signal Characterization, Amplifier Design, and Performance of K-Band GaAs MESFETS

摘要

Recent advances in Gallium Arsenide field-effect transistor technology have extended the power amplification capabilities of FETs to the K-Band frequency range. FETs with performance capability of 0.5 watt power output at 20 GHz have been developed. Large-signal S-parameter characterizations of these devices have been utilized in designing power and amplifiers. Transistor performance capability is discussed together with the performance of experimental amplifier designs realized in a microstrip environment. (Author)