Secondary Ion Mass Spectrometric Image Depth Profiling for Three-Dimensional Elemental Analysis

摘要

Three-dimensional elemental microcharacterization of the near-surface regions of solid samples is performed by combining the dynamically eroding nature of secondary ion mass spectrometry (SIMS), spatially resolved multi-area, multi-element ion intensity data, and digital image processing. Multiple simultaneous depth profiles and three-dimensional image profiles are used to analyze a metal-oxide semiconductor (MOS) integrated circuit and ion implant samples. (Author)