Dislocation Induced Noises in Semiconductors at Low and High Temperatures

摘要

This investigation was concentrated on better understanding of the dislocation structure involved in noise generation process. It is shown that noise power depends on unhomogeneities of dislocation structure especially on randomly distributed dislocation electrical barriers. The annealing of dislocation-point defect complexes does not influence the noise spectrum. It is difficult to find a proper explanation for this surprising result.