Depth-Resolved Luminescence of Gallium Arsenide Using Ion Etching

机译：用离子蚀刻法研究砷化镓的深度分辨率

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A system was assembled for obtaining depth-resolved, low-temperature luminescence data from GaAs using ion etching. This system was tested on virgin and silicon implanted, liquid-encapsulated Czochralski (LEC) grown GaAs. It was found to be effective in detecting lattice damage in annealed and unannealed Si-implanted GaAs.

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Maclin, M. T.;
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年度 1981
页码 p.1-102
总页数 102
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Gallium arsenides; Ion implantation; Crystal defects; Cathodoluminescence; Semiconductors; Photoluminescence; Crystals; Epitaxial growth; Liquid phases; Etching; Silicon; Doping; Impurities; Ion bombardment; Depth; Ion beams; Low temperature; Annealing; Surface analys;

机译：砷化镓;离子注入;晶体缺陷;阴极发光;半导体;光致发光;晶体;外延生长;液相;蚀刻;硅;掺杂;杂质;离子轰击;深度;离子束;低温;退火;表面分析;

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专利

1. An energetic study on the formation of self-assembled indium arsenide nanostructures grown on indium gallium arsenide/indium phosphide and gallium arsenide substrates [J] . F Shi, Kuo-Lih Chang, K C Hsieh Proceedings of the Institution of Mechanical Engineers, Part N: Journal of Nanoengineering and Nanosystems . 2007,第1期

机译：在砷化铟镓/磷化铟和砷化镓衬底上生长的自组装砷化铟纳米结构形成的有力研究
2. Photoluminescence study of gallium vacancy defects in gallium arsenide irradiated by relativistic protons [J] . Carlone C., Parenteau M. IEEE Transactions on Nuclear Science . 1997,第6期

机译：相对论质子辐照砷化镓中镓空位缺陷的光致发光研究
3. Photoluminescence of neodymium‐implanted gallium phosphide and gallium arsenide [J] . Journal of Applied Physics . 1986,第6期

机译：钕植入的磷化镓和砷化镓的光致发光
4. Development of a Micro Photoluminescence Measurement System for the Spectrum Inspection of Gallium Arsenide/Gallium Arsenide Phosphide (GaAs/GaAs_(1-x) P_x) [C] . Mu-Chiau Xie, Fang-Jung Shiou, Geo-Ry Tang, International Conference on Advanced Manufacturing . 2012

机译：用于砷化镓/砷化镓磷化镓的光谱检查微光致发光测量系统的研制（GaAs / GaAs_（1-x）P_x）
5. High -precision correlation of fundamental material parameters for bulk indium gallium arsenide on indium phosphide and indium gallium arsenide HEMT structures using photoluminescence, x-ray diffraction, photoreflectance, and Raman spectroscopy [D] . Estrera, Joseph Paul 1992

机译：使用光致发光，x射线衍射，光反射和拉曼光谱法，对磷化铟和砷化铟镓HEMT结构上的块状砷化铟镓的基本材料参数进行高精度关联
6. Electrical detection of the biological interaction of a charged peptide via gallium arsenide junction-field-effect transistors [O] . Kangho Lee, Pradeep R. Nair, Muhammad A. Alam, -1

机译：通过砷化镓结-场效应晶体管电检测带电肽的生物相互作用
7. REACTIVE ION ETCHING OF GALLIUM-ARSENIDE AND ALUMINUM-GALLIUM - ARSENIDE USING BORON TRICHLORIDE AND CHLORINE [O] . Hendricks Douglas Ray 1958- 1987

机译：三氧化二硼和氯对砷化镓和砷化铝镓的反应离子刻蚀

Depth-Resolved Luminescence of Gallium Arsenide Using Ion Etching

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