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Correlation between the Composition/Bonding and Insulating Properties of Grown Oxides on III-V Compound Semiconductors

机译:III-V族化合物半导体上生长氧化物的组成/键合与绝缘性能的相关性

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This research investigated the composition, structure and electrical properties of thermal and anodic oxides of the III-V compounds. The composition of the oxides was determined by XPS profiling. Models for the structure of the oxides were obtained from current-voltage, X-ray diffraction and XPS data. The chemical composition and electrical properties of anodic oxides of InP were found to be highly dependent on the growth conditions but the oxides on GaAs and InAs were not.

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