Transient Annealing of Selenium-Implanted Gallium Arsenide Using a Graphite Strip Heater

摘要

A graphite strip heater has been used for transient annealing, at temperatures of 900-1140 C, of GaAs wafers implanted at 300 C with a 10 to the 15th power/sq cm dose of 400-keV Se (+) ions. The electrical activation of the implant produced by annealing at 1140 C for 10s yields a sheet resistivity of 25 ohms/square abd sheet carrier concentration of 1.8 x 10 to the 14th power/sq cm, compared with values of 35 ohms/square 1.1 x 10 to the 14th power obtained by conventional furnace annealing at 950/C for 30 min.