Study of Gauss-Seidel-Type Methods for Simulating Large-Scale Circuits

摘要

The Gauss-Seidel relaxation method is becoming widely used in the time-domain analysis of large-scale integrated circuits. This research is concerned with the study of the stability properties of point Gauss-Seidel methods when applied to the simulation of MOS circuits. The stability properties of standard Gauss-Seidel and of a modified Gauss-Seidel method with prediction are compared; and a new modified Gauss-Seidel method is proposed which incorporates the desirable properties of both the standard Gauss-Seidel and the one with prediction. The method has been tested in a computer program for the timing analysis of MOS circuits.