Development of Direct Band Gap Group IV Semiconductors with the Incorporation of Sn.

摘要

Due to the indirect energy band of group IV materials of Si and Ge, these materials and their alloys can't be used to make optical devices. In this project, direct bandgap group IV alloy of GeSn alloy was developed. This report covers: (a) growth techniques of GeSn alloy with various Sn compositions, (b) characterization of the alloy, and (c) physical properties of the alloy and identification of direct optical transitions.