IMAGE SENSOR WITH LAYERS OF DIRECT BAND GAP SEMICONDUCTORS HAVING DIFFERENT BAND GAP ENERGIES

摘要

Embodiments of an exemplary image sensor structure of the present disclosure contains at least two different layers of band gap semiconductors, where each upper layer of the different layers has a different band gap than a lower layer. For such an image sensor structure, the upper layer has a greater band gap than any layer positioned below the upper layer including the lower layer.