Optical and Electrical Characterization of Multiply Doped Silicon: A Study of the Si:(In, Al) System

摘要

Infrared absorption, spectral photoconductivity, photoluminescence, and Hall effect transport measurements have been used to study the optical and electrical properties of silicon single crystals grown by the Czochralski method, which were intentionally doped with indium and aluminum. Thermal annealing did not produce the expected concentrations of In-X acceptors but did increase the concentration of donors in this material. The Al-X level was observed in a concentration of 1% of the parent concentration. Temperature dependence of the intensity of Al-X excited states was determined by photothermal ionization and observed to be the same as that of simple group IIIA acceptors.