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Electrical pumps of rare earth doped silicon for optical emission

机译:稀土掺杂硅电动泵用于光发射

摘要

The present invention relates to a structure including a pn junction inside a semiconductor having a first p-type region and a first n-type region and a region located near a pn junction doped with a rare earth element . The structure also includes a charge source coupled to one of the p-type region and the n-type region to provide a charge carrier to excite atoms of the rare earth element. The method includes the steps of providing a bipolar junction transistor, doping a region in a collector of the transistor with a rare earth element, biasing the transistor to excite the region from the doped region with the rare earth element and generating light emission from the light source.
机译:本发明涉及一种结构,该结构包括在半导体内部的pn结,该半导体具有第一p型区域和第一n型区域以及位于掺杂有稀土元素的pn结附近的区域。该结构还包括耦合到p型区域和n型区域之一的电荷源,以提供电荷载流子来激发稀土元素的原子。该方法包括以下步骤:提供双极结型晶体管,用稀土元素掺杂晶体管的集电极中的区域,偏置晶体管以用稀土元素从掺杂区域中激发该区域,并从光中产生光发射。资源。

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