Electrical pumps of rare earth doped silicon for optical emission

摘要

The present invention relates to a structure including a pn junction inside a semiconductor having a first p-type region and a first n-type region and a region located near a pn junction doped with a rare earth element . The structure also includes a charge source coupled to one of the p-type region and the n-type region to provide a charge carrier to excite atoms of the rare earth element. The method includes the steps of providing a bipolar junction transistor, doping a region in a collector of the transistor with a rare earth element, biasing the transistor to excite the region from the doped region with the rare earth element and generating light emission from the light source.