Physical Properties of CdTe Films Grown by Hotwall and Molecular Beam Techniques

摘要

Results have shown that MBE and hotwall MBE techniques can be employed to grow high quality epitaxial CdTe films, suitable for use as substrates for Hg CdTe film growth, using alternative substrates. In particular, Cdte / (0001) sapphire and CdTe / (100) GaAs provide viable alternatives to bulk CdTe for use as substrates in the 2-5 micrometer and 8-14 micrometer IR regions, respectively. The most recent results indicate that layers grown by hotwall MBE are at least comparable to and, perhaps, superior to MBE grown films. This is an important finding because it implies that the CdTe epitaxial film growth process on these alternatives substrates may be scaled-up to meet production needs for substrate using batch processing techniques. (Author)