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Zero-dimensional excitonic properties of self-organized quantum dots of CdTe grown by molecular beam epitaxy

机译:分子束外延生长CdTe自组织量子点的零维激子性质

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摘要

The successful growth of self-organized quantum dots (QDs) of CdTe on ZnTe (100) surface by molecular beam epitaxy is reported. Atomic force microscope measurements on the uncapped samples revealed the formation of CdTe QDs with typical dot diameters of 20 ± 2 nm and heights of 2.7 ± 0.3 nm at 3.5-ML-thick CdTe deposited. The intensity of photoluminescence (PL) from the capped QDs was higher than CdTe/ZnTe single quantum wells (SQWs) by a few orders of magnitude at 4.2 K, and exhibited a thermal quenching with an activation energy of 110 meV, which is about twice as large as those in SQWs. In time-resolved PL measurements, the decay time was almost independent of temperature below 20 K. This is interpreted as due to the zero-dimensional excitonic properties in QDs.
机译:通过分子束外延,成功地在ZnTe(100)表面上成功地生长了CdTe的自组织量子点(QDs)。在未封盖的样品上进行的原子力显微镜测量显示,在沉积3.5-ML厚的CdTe时,形成了典型的点直径为20±2 nm,高度为2.7±0.3 nm的CdTe QD。封端量子点的光致发光(PL)强度在4.2 K时比CdTe / ZnTe单量子阱(SQWs)高几个数量级,并表现出热猝灭和110 meV的激活能和SQW中的一样大。在时间分辨的PL测量中,衰减时间几乎与20 K以下的温度无关。这被解释为归因于QD中的零维激子特性。

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