High Resistivity InGaAs(Fe) Grown by a Liquid Phase Epitaxial Substrate-Transfer Technique

摘要

Reproducible growth of high quality InGaAs(Fe) by liquid phase epitaxy has been achieved by using long pregrowth bakes and a substrate-transfer apparatus. A mixed conduction model with fixed electron and hole mobilities is shown to explain the large variation of transport properties with Fe doping. This model predicts a maximum resistivity of 2500 ohm cm, and samples with resistivities within 5% of this value have been grown.