GaAs monocrystal substrate and liquid phase epitaxially grown modulo null for liquid phase grow epitaxially

摘要

PURPOSE: To form a Ga_1-x Al_xAs layer excellent in surface morphology by a liquid phase epitaxial growth method, by setting the crystal face orientation of a GaAs substrate surface as the {100} face whose face orientation error is lower than or equal to a specified value. ;CONSTITUTION: The title GaAs single crystal substrate is used when a Ga_1-xAl_xAs (where 0≤x1) epitaxial growth later is formed on a GaAs single crystal substrate by a liquid phase epitaxial growth method. The crystal face orientation of the GaAs single crystal substrate surface is set as the {100} face whose face orientation error (θ) is smaller than or equal to 0.2°. An epitaxial wafer is constituted by forming the following in order on a P-type (100)GaAs substrate 10; a P-type Ga_0.25Al_0.75As clad layer 11 of 150μm in thickness, a P-type Ga_0.62Al_0.38As active layer 12 of 1μm in thickness, and an N-type Ga_0.25Al_0.75As clad layer 13 of 50μm in thickness.;COPYRIGHT: (C)1995,JPO