Liquid phase epitaxially grown manner and compound semiconductor monocrystal substrate null of

摘要

PURPOSE: To prevent a substrate from sliding during transportation by measuring surface roughness for a point of a specific length in every specified area on a substrate surface and limiting the measured values on a line of a specified measuring length to a specified range of values. ;CONSTITUTION: A GaAs single-crystal ingot, grown by a boat method, is sliced to obtain wafers of 530 pro in thickness. Each wafer is processed into a circular substrate in 76mm in dia. for liquid phase epitaxial growth. An inner diameter saw wheel having ordinary diamond abrasive grains electrodeposited is used for the slicing; however, the surface roughness is improved by improving the mechanical accuracy of each part of the slicer and further optimizing the size and shape of diamond grain. The surface roughness of a sliced wafer is measured on a line of 1mm in length in almost every area of 1cm² on the wafer surface. The surface roughness shall be within the range of from 1-4μm to 20μm at 50% or more of the measured points.;COPYRIGHT: (C)1994,JPO&Japio