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Characterization of Illuminated Semiconductor/Solid-Electrolyte Junctions. Semiconductor Redox Polymer Detector Junctions

机译:发光半导体/固体电解质结的表征。半导体氧化还原聚合物检测器连接点

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The dependency of n-TiO2 flatband potential (V sub fb) for cells of the general configuration: n-TiO2/Nafion 117, Redox species/SnO2 conducting glass, was systematically studied for the redox species Ru(bpy)32+, Fe(bpy)32+ and Ru(NH3)63+ as a function of their concentration within the polymer. The linear relationship V sub fb = M (1/concentration) + b, was found to hold for all cells. The slope (M) was found dependent upon metal complex used and its oxidation state. The sensitivity of n-TiO2, V sub fb to its immediate chemical environment at its interface with the redox polymer can be a strategy pursued for chemical detection. Keywords: Nafion 117; N-type titanium dioxide; Solid-state photoelectrochemical cells.

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