Heavy-Ion Induced Single Event Upsets in a Bipolar Logic Device

摘要

Heavy ion test results for a bipolar logic device of moderate complexity are presented in this report. Such devices required the implementation of special techniques for testing circuits of varying upset sensitivity, and unlike similar MOS devices, present problems with test data interpretation. Keywords: Bipolar Schottky Circuit; Cosmic rays; Heavy ions; Microprocessor-Bit slice; Single event upset.