Comparisons of MESFET Bipolar Transistor and Static Induction Transistor Class C Amplifiers

摘要

Comparison of device performance of class C amplifier is presented. Simplified modelling of the I-V characteristics and input circuits is employed. Useful gain and power-added efficiency can be achieved at conduction angles between 130 and 180. The silicon bipolar type leads among the three devices in output power, gain and efficiency. The InP MESFET followed by the GaAs MESFET can give power comparable to the bipolar type with slightly lower gain and efficiency. The static induction transistor has high power potential but its gain and efficiency are moderate. (Reprints)